光电子学
材料科学
波长
光伏系统
太阳能电池
制作
开路电压
量子效率
宽禁带半导体
量子阱
电压
光学
物理
激光器
电气工程
工程类
病理
替代医学
医学
量子力学
作者
R. Dahal,B. N. Pantha,J. Li,J. Y. Lin,Hongxing Jiang
摘要
We report on the fabrication and photovoltaic characteristics of InGaN solar cells by exploiting InGaN/GaN multiple quantum wells (MQWs) with In contents exceeding 0.3, attempting to alleviate to a certain degree the phase separation issue and demonstrate solar cell operation at wavelengths longer than previous attainments (>420 nm). The fabricated solar cells based on In0.3Ga0.7N/GaN MQWs exhibit an open circuit voltage of about 2 V, fill factor of about 60%, and an external efficiency of 40% (10%) at 420 nm (450 nm).
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