Preparation of Stoichiometric TiN<sub>x</sub> Films by Laser CVD with Metalorganic Precursor

Nearly stoichiometric TiN x films were deposited on Al 2 O 3 substrates by laser enhanced chemical vapor deposition (CVD) with tetrakis (diethylamido) titanium (TDEAT) and ammonia as the source materials. Emphases were given on the effects of laser power ( P L ) and pre-heating temperature ( T pre ) on the composition and deposition rate of TiN x films. Single phase of TiN x films with columnar cross section were obtained. The ratio of N to Ti in TiN x films increased with increasing P L and was close to stoichiometric at P L > 150 W. The deposition rate of TiN x films with a depositing area of 300 mm 2 was about 18-90 µm/h, which decreased with increasing P L and T pre .