Evolution, challenge, and outlook of TSV, 3D IC integration and 3d silicon integration
通过硅通孔
计算机科学
互连
集成电路
作者
John H. Lau
出处
期刊:International Symposium on Advanced Packaging Materials日期:2011-10-01被引量:126
标识
DOI:10.1109/isapm.2011.6105753
摘要
3D integration consists of 3D IC packaging, 3D IC integration, and 3D Si integration. They are different and in general the TSV (through-silicon via) separates 3D IC packaging from 3D IC/Si integrations since the latter two use TSV but 3D IC packaging does not. TSV (with a new concept that every chip or interposer could have two surfaces with circuits) is the heart of 3D IC/Si integrations and is the focus of this investigation. The origin of 3D integration is presented. Also, the evolution, challenges, and outlook of 3D IC/Si integrations are discussed as well as their road maps are presented. Finally, a few generic, low-cost, and thermal-enhanced 3D IC integration system-in-packages (SiPs) with various passive TSV interposers are proposed.