辐射传输
俄歇效应
量子效率
自发辐射
钙钛矿(结构)
量子阱
物理
二极管
发光二极管
无辐射复合
原子物理学
材料科学
光电子学
化学
螺旋钻
光学
半导体
结晶学
激光器
半导体材料
作者
Chaohuang Mai,Yangke Cun,Yu Luo,Binbin Zhang,Miaozi Li,Haihua Li,Lan Mu,Junjie Wang,Danyang Li,Jian Wang
标识
DOI:10.1021/acs.jpcc.1c03458
摘要
The performance of perovskite light-emitting diode (PeLED) devices based on multiple quantum wells is strongly dependent on the quantum well (QW) distribution in the perovskite films. To fully understand the effect of the QW distribution, a theoretical framework is established to calculate the radiative efficiency based on the distribution of QWs in PeLEDs by combining the charge-carrier recombination and the energy loss in the energy transfer process. A ratio parameter φ is introduced into the dependence of the radiative efficiency on the charger-carrier dynamics for the first time, by taking into account the fact that while the radiative recombination mainly occurs in large-n QWs, the nonradiative recombination exists in both small-n and large-n QWs. The interplays among the energy transfer, the Auger recombination rate, and the radiative recombination rate in determining the dependence of the radiative efficiency on the QW distribution are elucidated. It is revealed that the Auger recombination and the energy loss in energy transfer significantly reduce the radiative efficiency with a large ratio of n = 2 QWs to n ≥ 5 QWs. As the proportion of n ≥ 5 QWs increases, the radiative recombination rate becomes lower because of the low charge density in n ≥ 5 QWs, and the efficiency roll-off becomes milder. The theoretical framework not only successfully predicts and explains the trends of the peak efficiency and the efficiency roll-off of the ITO/PEDOT:PSS/PEA2(Cs0.2FA0.8PbBr3)n−1PbBr4/TPBi/LiF/Al devices, but also sets an upper limit of the efficiency which the actual devices could achieve.
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