Surface modification of β-Ga2O3 layer using pt nanoparticles for improved deep UV photodetector performance

In this work, we have investigated the potential of Pt nanoparticles in modification the surface of β-Ga2O3 layer, which improved the performance of β-Ga2O3-based device with a novel asymmetric metal-semiconductor-metal (MSM) structure. The results shown that the disadvantage of high dark current in traditional MSM detector can be overcome by the novel asymmetric MSM detector and the Pt nanoparticles can remarkably enhance the generation of photogenerated carriers via formation of the local surface plasmon resonance effect. As a result, the obtained device has a high responsivity of 29.08 A/W, an excellent detectivity (D*) of 2.16 × 1011 Jones and a high normalized photocurrent-to-dark current ratio (NPDR) of 5.156 × 106 mW−1cm2, exhibiting an increase by 88.5%, 677% and 3024.8% compared to pristine device. At last, the energy band theory and the finite difference time-domain (FDTD) calculation were used to explain the mechanism of device performance improvement. These results of our study provide an effective method for fabricating high-performance solar-blind photodetector and pave the way for the potential application of Pt nanoparticles in the field of deep UV photodetector.