过电位
塔菲尔方程
催化作用
密度泛函理论
二硫化钨
二硫化钼
化学
X射线光电子能谱
过渡金属
钨
化学工程
材料科学
氢
光化学
纳米技术
无机化学
物理化学
计算化学
电化学
有机化学
冶金
工程类
电极
作者
Fan Wang,Shuwen Niu,Xinqi Liang,Gongming Wang,Minghua Chen
出处
期刊:Nano Research
[Springer Nature]
日期:2021-09-18
卷期号:15 (4): 2855-2861
被引量:24
标识
DOI:10.1007/s12274-021-3873-2
摘要
The basal planes of transition metal dichalcogenides are basically inert for catalysis due to the absence of adsorption and activation sites, which substantially limit their catalytic application. Herein, a facile strategy to activate the basal plane of WS2 for hydrogen evolution reaction (HER) catalysis by phosphorous-induced electron density modulation is demonstrated. The optimized P doped WS2 (P-WS2) nanowires arrays deliver a low overpotential of 88 mV at 10 mA·cm−2 with a Tafel slope of 62 mV·dec−1 for HER, which is substantially better than the pristine counterpart. X-ray photoelectron spectroscopy confirms the surface electron densities of WS2 have been availably manipulated by P doping. Moreover, density functional theory (DFT) studies further prove P doping can redistribute the density of states (DOS) around EF, which endow the inert basal plane of P-WS2 with edge-like catalytic activity toward hydrogen evolution catalysis. Our work offers a facile and effective approach to modulate the catalytic surface of WS2 toward highly efficient HER catalysis.
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