Broadband near-infrared BaMSi3O9:Cr3+ (M = Zr, Sn, Hf) phosphors for light-emitting diode applications

Cr 3+ -Doped BaMSi 3 O 9 (M = Zr, Sn, Hf) NIR-emitting phosphors have been developed, which exhibit a broad NIR emission band over 650–1200 nm with a tunable band maximum longer than 800 nm and a FWHM of more than 155 nm upon blue light excitation.