Selection of Switching Layer Materials for Memristive Devices: from Traditional Oxide to 2D Materials

Redox-based resistive switching devices (ReRAM) provide new hardware concepts which make it possible to break the von Neumann bottleneck and build a new computing system in the information. However, the materials for switching layers are various and mechanisms are quite different, these will block the further exploration for practical applications. This review tends to demonstrate different kinds of memristors fabricated with various materials, such as oxide, nitride and 2D materials. The electrical properties of those based on different materials are compared and the advantages of each are listed. It would give a guidance to the selection of materials of memristors.