材料科学
光电子学
激光器
砷化镓
功率(物理)
山脊
半导体激光器理论
光学
半导体
物理
地质学
量子力学
古生物学
作者
M. Sagawa,K. Hiramoto,K. Uomi,Kazunori Shinoda,T. Toyonaka
出处
期刊:Electronics Letters
[Institution of Electrical Engineers]
日期:1994-08-18
卷期号:30 (17): 1410-1411
被引量:22
摘要
The authors demonstrate the catastrophic-optical-damage-free high-output-power operation of 0.98 µm InGaAs/InGaP/GaAs buried-ridge-structure lasers with non-injection regions near the facets. A maximum output power of 466 mW and fundamental operation at 100 mW were achieved.
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