扫描隧道显微镜
材料科学
显微镜
光学显微镜
晶体缺陷
过渡金属
纳米技术
扫描电子显微镜
光学
结晶学
化学
复合材料
物理
生物化学
催化作用
作者
Hye Yun Jeong,Si Young Lee,Thuc Hue Ly,Gang Han,Hyun Kim,Honggi Nam,Jiong Zhao,Bong Gyu Shin,Seok Joon Yun,Jae Su Kim,Un Jeong Kim,Sungwoo Hwang,Young Hee Lee
出处
期刊:ACS Nano
[American Chemical Society]
日期:2015-12-09
卷期号:10 (1): 770-777
被引量:60
标识
DOI:10.1021/acsnano.5b05854
摘要
While transmission electron microscopy and scanning tunneling microscopy reveal atomic structures of point defect and grain boundary in monolayer transition-metal dichalcogenides (TMDs), information on point defect distribution in macroscale is still not available. Herein, we visualize the point defect distribution of monolayer TMDs using dark-field optical microscopy. This was realized by anchoring silver nanoparticles on defect sites of MoS2 under light illumination. The optical images clearly revealed that the point defect distribution varies with light power and exposure time. The number of silver nanoparticles increased initially and reached a plateau in response to light power or exposure time. The size of silver nanoparticles was a few hundred nanometers in the plateau region as observed using optical microscopy. The measured defect density in macroscale was ∼2 × 1010 cm–2, slightly lower than the observed value (4 × 1011 cm–2) from scanning tunneling microscopy.
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