红外线的
光电探测器
像素
光电子学
量子阱红外探测器
材料科学
探测器
CMOS芯片
光学
炸薯条
铟
光电二极管
点间距
物理
量子阱
电信
计算机科学
激光器
作者
P. Helander,J. Y. Andersson,Jörgen Alverbro,J. Borglind,Z. Fakoor-Biniaz,Y. Eriksson,Urban Halldin,Henk Martijn,P. J. Tolf,M. stlund
出处
期刊:Physica Scripta
[IOP Publishing]
日期:1999-01-01
卷期号:T79 (1): 138-138
被引量:4
标识
DOI:10.1238/physica.topical.079a00138
摘要
Infrared pixel detectors sensitive to radiation in the wavelength range 8 to 9 µm have been fabricated and evaluated. The detectors have 320 × 240 pixels and consist of two parts. One is the infrared sensitive part with a quantum well structure based on n-doped AlGaAs/GaAs. The other part is a readout circuit in standard CMOS technology. The two parts are hybridized by a flip-chip technique using indium bumps.
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