离子注入
镓
材料科学
兴奋剂
离子
镁
氮化镓
氮化物
光电子学
冶金
化学
纳米技术
有机化学
图层(电子)
作者
Tomoaki Nishimura,Kiyoji Ikeda,Tetsu Kachi
标识
DOI:10.35848/1882-0786/ac039e
摘要
Abstract Ion implantation into p-type gallium nitride (GaN) to a depth of several microns for power devices is a challenge because their activation is disturbed by the damage caused by implantation. To reduce this damage, a channeled implantation technique was applied to implant magnesium (Mg) ions into GaN (0001). Compared with random implantation, channeled implantation was demonstrated to implant and activate ions in >10 times deeper regions. Thus, the channeled implantation technique is indispensable for the deep implantation of Mg ions into GaN devices.
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