Self-Heating and Quality Factor: Thermal Challenges in Aluminum Scandium Nitride Bulk Acoustic Wave Resonators
材料科学
谐振器
光电子学
铝
Q系数
氮化物
钪
负热膨胀
氮化铝
热膨胀
陶瓷
作者
Yue Zheng,Mingyo Park,Azadeh Ansari,Chao Yuan,Samuel Graham
出处
期刊:International Conference on Solid-State Sensors, Actuators and Microsystems日期:2021-06-20卷期号:: 321-324被引量:1
标识
DOI:10.1109/transducers50396.2021.9495613
摘要
Understanding the thermal properties of piezoelectric thin films is essential in studying the performance and ultimate dissipation limits of bulk acoustic wave resonators. Here, we present the experimental and modeled results of thermal conductivity of the in-demand piezoelectric material aluminum scandium nitride (Al 1-x Sc x N), with x = Sc/(Sc+Al) ratio. We construct the three-dimensional (3D) finite-element modeling (FEM) of a back-side etched thin-film bulk acoustic wave resonator (FBAR) with aluminum nitride (AlN) and Al 0.7 Sc 0.3 N thin films. Comparison reveals a 26% more temperature rise in Al 0.7 Sc 0.3 N FBAR with equal input surface heat density of 2 W/mm2. The trend is consistent with the drastic decrease of thermal conductivity with increasing x in Al 1-x S cx N. Consequently, as we study the upper limit of the frequency (f), quality factor (Q) product (f. Q) under phonon interactions, Al 1-x S cx N exhibits a greater amount of degradation due to self-heating. This work reports the first comparison of thermal properties of AlN and Al 1-x S cx N resonators, critical in material selection for resonator operation under high power levels.