Etching-Free Transfer and Nanoimaging of CVD-Grown MoS2 Monolayers

材料科学 单层 蚀刻(微加工) 图层(电子) 纳米技术
作者
Syed Hamza Safeer,Thiago L. Vasconcelos,Bruno Oliveira,Bráulio S. Archanjo,Michael Nazarkovsky,Cecília Vilani,F.L. Freire,Victor Carôzo
出处
期刊:Journal of Physical Chemistry C [American Chemical Society]
卷期号:125 (38): 21011-21017 被引量:3
标识
DOI:10.1021/acs.jpcc.1c05510
摘要

The transfer of two-dimensional materials from grown substrates onto target substrates is critical for device applications and postgrown analysis. The traditional transfer method for as-grown two-dimensional materials requires a wet chemical etching process that damages the crystals and the substrates. These issues deteriorate the electrical and optical performances of two-dimensional-material-based devices fabricated afterward. Herein, we developed an etching-free method and nanoimaging for transferring and analyzing monolayers of MoS2 onto arbitrary substrates using polyurethane as a sacrifice polymer. The polymer layer and the MoS2 crystals can be peeled off from the substrate by tweezers and transferred to any substrate. We analyzed the transferred samples to a glass coverslip substrate with optical microscopy, atomic force microscopy, tip-enhanced Raman spectroscopy, and tip-enhanced photoluminesce spectroscopy. Also, we transferred monolayers of MoS2 to a transmission electron microscopy grid and acquired scanning electron microscopy together with high-resolution scanning transmission electron microscopy images. The results of nanoimaging indicate that the method preserved the sample's optical and structural properties and avoid undesirable cracks, wrinkles, and polymer residues. The etching-free transfer method of as-grown two-dimensional materials will improve the quality of transferred samples enhance the devices' performance.

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