响应度
光电探测器
光电子学
材料科学
光学
光子集成电路
波长
共振(粒子物理)
多波段设备
锗
激光线宽
光子学
物理
电信
硅
激光器
粒子物理学
计算机科学
天线(收音机)
作者
Qimiao Chen,Shaoteng Wu,Lin Zhang,Daniel Burt,Hao Zhou,Donguk Nam,Wenhui Fan,Chuan Seng Tan
出处
期刊:Optics Letters
[Optica Publishing Group]
日期:2021-07-30
卷期号:46 (15): 3809-3809
被引量:10
摘要
Germanium-tin-on-insulator (GSOI) has emerged as a new platform for three-dimensional (3D) photonic-integrated circuits (PICs). We report, to our knowledge, the first demonstration of GeSn dual-waveband resonant-cavity-enhanced photodetectors (RCE PDs) on GSOI platforms with resonance-enhanced responsivity at both 2 µm and 1.55 µm bands. 10% Sn is introduced to the GeSn absorbing layer to extend the detection wavelength to the 2 µm band. A vertical Fabry–Perot cavity is designed to enhance the responsivity. The measured responsivity spectra show resonance peaks that cover a wide wavelength range near both the 2 µm and conventional telecommunication bands. This work demonstrates that GeSn dual-waveband RCE PDs on a GSOI platform are promising for CMOS-compatible 3D PICs for optoelectronic applications in 2 µm and telecommunication bands.
科研通智能强力驱动
Strongly Powered by AbleSci AI