兴奋剂
载流子
激子
材料科学
钙钛矿(结构)
光谱学
太赫兹光谱与技术
化学物理
极化率
太赫兹辐射
电荷(物理)
光电子学
凝聚态物理
化学
物理
结晶学
分子
量子力学
有机化学
作者
Zhengyuan Qin,Chunfeng Zhang,Lan Chen,Xizhang Wang,Min Xiao
标识
DOI:10.3389/fenrg.2021.658270
摘要
Sn doping is established as an effective approach to promote the light emission properties in in two-dimensional lead-halide perovskites. However, the effect on the charge carrier dynamics is largely unexplored. In this work, we conduct terahertz spectroscopy to study the effects of Sn doping on the charge dynamics in the two-dimensional perovskites PEA 2 Sn x Pb 1 – x I 4 (PEA = phenethylammonium) with different doping levels. The spectral dispersion analysis suggests that the early-stage dynamics with lifetime of ∼ 2 ps is contributed by both the transport of hot charge carriers and the polarizability of hot excitons. The long-lived component of first-order charge carrier recombination is dramatically improved when Sn doping increases, which is ascribed to the equilibrium between charge carriers and excitons with smaller bind energies in the higher-level Sn-doped samples. The finding in this work suggests Sn doping is an effective approach to optimize the charge carrier transport in 2D perovskite for potential optoelectronic applications.
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