整改
锡
材料科学
电阻随机存取存储器
电阻式触摸屏
电流(流体)
极限(数学)
光电子学
纳米技术
凝聚态物理
电气工程
电压
物理
工程类
数学
数学分析
冶金
作者
Jung Ho Yoon,Dae Eun Kwon,Yumin Kim,Yong Jin Kwon,Kyung Jean Yoon,Tae Hyung Park,Xing Long Shao,Cheol Seong Hwang
出处
期刊:Nanoscale
[The Royal Society of Chemistry]
日期:2017-01-01
卷期号:9 (33): 11920-11928
被引量:45
摘要
The Pt/TiO2/HfO2−x/TiN resistive switching memory structure showed self-rectifying resistive switching behavior with unprecedented unique I–V curves named “self-current saturation”, which can give an extremely uniform variation of the low resistance state.
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