P‐32: Light Shielding Layers Enabled Full Swing Multi‐Layer MoS2 Inverters For the Application of Photodetectors

Multi‐layered MoS 2 inverters with light shielding (LS) layers were fabricated and demonstrated for application in highly sensitive photo detectors, exploiting the particular advantages of an atomically thin layer and a sizable electrical band gap. The photoleakage behaviors of the inverters under changing wavelengths of light were experimentally demonstrated to occur in a controlled manner, and were analytically validated by load‐line analysis. When the inverters were operated with a depletion load in the light of blue light emitting diodes (LEDs), the low noise margin (NML) and transition width were significantly enhanced, by approximately 20 and 220%, respectively, as compared to those of the inverters in the dark.