P‐111: Black Photoresist Bank for Inkjet‐Printed Quantum Dot Light‐Emitting Diodes

We demonstrated a bank structure for inkjet‐printed quantum dot light‐emitting diodes (QLEDs) fabricated through photolithography process using black photoresist (B‐PR). The B‐PR banks have low surface energy (13 mJ m −2 ), resulting in well confined quantum dot (QD) ink inside the pixel area. Based on the B‐PR bank structure, we demonstrated a QLED with 0.20 % of external quantum efficiency.