Study on the Mn-doped CsPbCl3 perovskite nanocrystals with controllable dual-color emission via energy transfer

钙钛矿(结构) 纳米晶 兴奋剂 四方晶系 材料科学 激子 量子点 发射强度 光致发光 Crystal(编程语言) 光子上转换 激发 光电子学 发光 晶体结构 纳米技术 化学 结晶学 凝聚态物理 工程类 物理 电气工程 计算机科学 程序设计语言
作者
Wenzhi Wang,Jinkai Li,Guangbin Duan,Hong Zhou,Yizhong Lu,Tao Yan,Bingqiang Cao,Zongming Liu
出处
期刊:Journal of Alloys and Compounds [Elsevier]
卷期号:821: 153568-153568 被引量:34
标识
DOI:10.1016/j.jallcom.2019.153568
摘要

Halide perovskite quantum dots (QDs) have been considered to be an outstanding optoelectronic material. However, the existence of Pb make it toxic, greatly hinders their practical application. Here, the Mn-doped is adopted to solve this problem without affecting their optical properties. Highly monodisperse low-Pb content Cs(Pb1-xMnx)Cl3 (x = 0.3–0.7) perovskite QDs with cubic morphologies (∼7 nm edge lengths) are prepared though using the improved hot-injection method. The Mn-doped does not alter the crystal structure, and maintain the tetragonal crystalline structure of the CsPbCl3 host. The Cs(Pb1-xMnx)Cl3 QDs exhibit two emissions, including the host emission ∼ 400 nm and the Mn2+ emission ∼ 590 nm. The PL intensity of 590 nm increase with the Mn increasing, attributing to the energy transfer of photoinduced excitons from the CsPbCl3 host to the doped Mn2+. Meanwhile, the positions of broad emission can be tuned by changing the Mn2+ content, indicating the emission color of samples can be controlled. Owing to the CsPbCl3 host→Mn2+ energy transfer, the lifetimes for the CsPbCl3 host emission rapidly decreases. The temperature-dependent analysis has been performed, signature of the stimulated emission is observed at low temperature for excitation fluence. The emission intensity and position have been changed with the temperature rising, and the reason has been studied in detail. Meanwhile, the activation energy has been calculated, indicating that the Cs(Pb1-xMnx)Cl3 QDs possesses good thermal stability. The low-Pb content perovskite quantum dots provides a novel platform for the application in optoelectronic device applications.
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