材料科学
聚酰亚胺
电介质
微电子
复合数
复合材料
玻璃化转变
玻璃微球
介电损耗
聚合物
化学工程
图层(电子)
纳米技术
微球
光电子学
工程类
作者
Xianwu Cao,Jiangwei Wen,Laihua Song,Xin Liu,Guangjian He
摘要
Abstract Nowadays, polyimide (PI) with low dielectric constant is expected to be widely applied in microelectronics. For this reason, hollow glass microspheres (HGM) modified by silane coupling agent KH‐550 (K‐HGM), a series of HGM/PI and K‐HGM/PI composite films with excellent thermal performance, hydrophobic and low dielectric constant were fabricated by in situ polymerization. The effect of HGM/K‐HGM content on the properties of composite films was studied. The superior heat resistance of HGM can improve the thermal performance of composite films. Due to silane coupling agent KH‐550, K‐HGM exhibits a good interfacial compatibility with PI matrix and forms an interfacial adhesion region. With the HGM loading of 6%, comparing with pure PI films, the glass transition temperatures ( T g ) of composite films were dramatically increased by 32.3°C. Especially, the low dielectric constant of 2.21 and dielectric loss of 0.0059 at 1 MHz were obtained for the PI/K‐HGM composite film with addition of 8 wt%. Thus, PI/K‐HGM composite films show more excellent performance. The current work provides a promising solution for fabrication of PI with low dielectric constant and superior thermal performance that may be applied in microelectronics industry.
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