Modelling and Performance analysis of InGaN/GaN based Multiple Quantum Well solar cells

In this work, an analytical model is proposed as a convenient tool for the performance analysis of multiple quantum well (MQW) solar cells (MQWSC). Significantly, the American Society for Testing and Materials (ASTM) standards data sheets are utilized for obtaining photon flux instead of Plank's blackbody radiation law. Further, the performance parameters are evaluated using the obtained photon flux density. The MQWSC is analyzed based on the composition of indium in InGaN material of the intrinsic region (active region), the operating temperature and the number of MQWs used in MQWSC.