材料科学
兴奋剂
带隙
拉曼光谱
掺杂剂
Crystal(编程语言)
分析化学(期刊)
电导率
光电子学
应变工程
纳米技术
物理化学
光学
程序设计语言
化学
物理
色谱法
硅
计算机科学
作者
Saikat Bolar,Subhasis Shit,Naresh Chandra Murmu,Pranab Samanta,Tapas Kuila
标识
DOI:10.1021/acsami.0c20500
摘要
Doping engineering emerges as a contemporary technique to investigate the catalytic performance of MoS2. Cation and anion co-doping appears as an advanced route toward electrocatalytic hydrogen evolution reaction (HER). V and N as dopants in MoS2 (VNMS) build up a strain inside the crystal structure and narrow down the optical band gaps manifesting the shifting of the absorbance band toward lower energy and improved catalytic performance. FE-SEM, HR-TEM, and XRD analysis confirmed that V and N doping decreases agglomeration possibility, particle size, developed strain, and crystal defects during crystal growth. Frequency shift and peak broadening in Raman spectra confirmed the doping induced strain generation in MoS2 leading to the modification of acidic and alkaline HER (51 and 110 mV @ 10 mAcm–2, respectively) performance. The improved donor density in VNMS was confirmed by the Mott–Schottky analysis. Enhanced electrical conductivity and optimized electronic structures facilities H* adsorption/desorption in the catalytically active (001) plane of cation and anion co-doped MoS2.
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