钝化
等离子体增强化学气相沉积
材料科学
氮化硅
硅
光电子学
化学气相沉积
氧化硅
堆栈(抽象数据类型)
图层(电子)
纳米技术
计算机科学
程序设计语言
作者
Vivek Sharma,Clarence J. Tracy,D.K. Schroder,Stanislau Herasimenka,William J. Dauksher,Stuart Bowden
摘要
High quality surface passivation (Seff < 5 cm/s) was achieved on polished float zone and textured p- and n-type solar grade Czochralski silicon substrates by externally injecting and storing positive or negative charges (>±8 × 1012 cm−2) into a dual layer stack of Plasma Enhanced Chemical Vapor Deposition (PECVD) Silicon Nitride (SiNx)/PECVD Silicon Oxide (SiO2) films using a corona charging tool. We demonstrate long term stability and uniform charge distribution in the SiNx film by manipulating the charge on K center defects while negating the requirement of a high temperature thermal oxide step.
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