氧化铟锡
激子
离解(化学)
材料科学
酞菁
铟
异质结
有机太阳能电池
光电子学
接受者
薄膜
光化学
分析化学(期刊)
化学
纳米技术
物理化学
凝聚态物理
物理
复合材料
聚合物
色谱法
作者
Xiaoyu Sun,Qunliang Song,M. L. Wang,Xinyi Ding,X. Y. Hou,Zhijie Zhou,F. Y. Li
摘要
Exciton dissociation process at indium tin oxide (ITO)/copper phthalocyanine (CuPc) interface of ITO/CuPc(370 nm)/Al is studied by transient photovoltage method. A negative-to-positive change in the polarity of photovoltage upon pulsed laser irradiation is observed in CuPc thin film. The polarity change is regarded as a summation of the effect of exciton dissociation at ITO/CuPc interface (fast process) and that of free carrier separation by built-in field (slow process). Further experiments confirm the existence of exciton dissociation at ITO/CuPc interface, and the direction of which is electron injected into ITO, with holes left in CuPc film. This is opposite to that of the interfacial dissociation at donor/acceptor (D/A) interface in single heterojunction cells (ITO/D/A/buffer/Al). 3-nm-thick LiF insulating layer is inserted between ITO and CuPc to inhibit the exciton dissociation at ITO/CuPc interface. Thereby, the open-circuit voltage and power conversion efficiency of the single layer cell have been increased by several times.
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