发光二极管
光电子学
电致发光
材料科学
二极管
干法蚀刻
蚀刻(微加工)
宽禁带半导体
电流密度
量子阱
感应耦合等离子体
量子效率
光学
等离子体
纳米技术
激光器
物理
量子力学
图层(电子)
作者
S. X. Jin,J. Li,J. Z. Li,J. Y. Lin,H. X. Jiang
摘要
Microdisk light-emitting diodes (μ-LEDs) with diameter of about 12 μm have been fabricated from InGaN/GaN quantum wells. Photolithographic patterning and inductively coupled plasma dry etching have been employed to fabricate these μ-LED devices. Device characteristics, such as the current–voltage characteristics, light output power, and electroluminescence (EL) spectra have been measured and compared with those of conventional broad-area LEDs. Our results showed that, for an identical area, the quantum efficiencies of μ-LED are enhanced over the conventional broad-area LEDs due to an enhanced current density and possibly microsize effects. The implications of our results on the design of future UV/blue microoptoelectronic devices are discussed.
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