Evaluation of Piezoelectric Properties of AlN Using MEMS Resonators

This paper presents an effective evaluation of piezoelectric coefficients ( d 31 and d 33 ) and other mechanical properties of AlN thin films using resonator structures fabricated on a single wafer. The extracted value for d 31 is 1.60pm/V and the d 33 value is 3.15pm/V, which are comparable to the coefficient values published in literature. Fabrication of these resonator structures is straightforward and can be incorporated with other more complex steps. Hence, these resonators can serve as an excellent test structures to evaluate and predict the quality of AlN growth and piezoelectric properties of thin AlN films.