石墨烯
材料科学
光电子学
电极
氧化铟锡
薄板电阻
纳米技术
氧化物
兴奋剂
氧化石墨烯纸
二极管
薄膜
图层(电子)
物理化学
化学
冶金
作者
Gunho Jo,Minhyeok Choe,Sang‐Chul Lee,Woojin Park,Yung Ho Kahng,Takhee Lee
出处
期刊:Nanotechnology
[IOP Publishing]
日期:2012-02-28
卷期号:23 (11): 112001-112001
被引量:361
标识
DOI:10.1088/0957-4484/23/11/112001
摘要
Graphene is a promising next-generation conducting material with the potential to replace traditional electrode materials such as indium tin oxide in electrical and optical devices. It combines several advantageous characteristics including low sheet resistance, high optical transparency and excellent mechanical properties. Recent research has coincided with increased interest in the application of graphene as an electrode material in transistors, light-emitting diodes, solar cells and flexible devices. However, for more practical applications, the performance of devices should be further improved by the engineering of graphene films, such as through their synthesis, transfer and doping. This article reviews several applications of graphene films as electrodes in electrical and optical devices and discusses the essential requirements for applications of graphene films as electrodes.
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