成核
石墨烯
化学物理
材料科学
表面扩散
透射电子显微镜
化学气相沉积
纳米技术
凝聚态物理
机械
化学
物理
热力学
吸附
有机化学
作者
Jiong Zhao,Mehrdad Shaygan,J. Eckert,M. Meyyappan,Mark H. Rümmeli
出处
期刊:Nano Letters
[American Chemical Society]
日期:2014-05-02
卷期号:14 (6): 3064-3071
被引量:237
摘要
We propose a detailed mechanism for the growth of vertical graphene by plasma-enhanced vapor deposition. Different steps during growth including nucleation, growth, and completion of the free-standing two-dimensional structures are characterized and analyzed by transmission electron microscopy. The nucleation of vertical graphene growth is either from the buffer layer or from the surface of carbon onions. A continuum model based on the surface diffusion and moving boundary (mass flow) is developed to describe the intermediate states of the steps and the edges of graphene. The experimentally observed convergence tendency of the steps near the top edge can be explained by this model. We also observed the closure of the top edges that can possibly stop the growth. This two-dimensional vertical growth follows a self-nucleated, step-flow mode, explained for the first time.
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