纳米线
激光阈值
材料科学
光电子学
蓝宝石
激光器
激光线宽
半导体
纳米
纳米激光器
低语长廊波浪
光子学
纳米技术
紫外线
光学
波长
谐振器
物理
复合材料
作者
Michael H. Huang,Samuel S. Mao,H. Feick,Haoquan Yan,Yiying Wu,Hannes Kind,Eicke R. Weber,Richard E. Russo,Peidong Yang
出处
期刊:Science
[American Association for the Advancement of Science (AAAS)]
日期:2001-06-08
卷期号:292 (5523): 1897-1899
被引量:8804
标识
DOI:10.1126/science.1060367
摘要
Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated. The self-organized, <0001> oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process. These wide band-gap semiconductor nanowires form natural laser cavities with diameters varying from 20 to 150 nanometers and lengths up to 10 micrometers. Under optical excitation, surface-emitting lasing action was observed at 385 nanometers, with an emission linewidth less than 0.3 nanometer. The chemical flexibility and the one-dimensionality of the nanowires make them ideal miniaturized laser light sources. These short-wavelength nanolasers could have myriad applications, including optical computing, information storage, and microanalysis.
科研通智能强力驱动
Strongly Powered by AbleSci AI