堆积
图层(电子)
材料科学
聚苯乙烯
电阻式触摸屏
电阻随机存取存储器
光电子学
石墨烯
聚合物
化学气相沉积
电压
纳米技术
复合材料
化学
电气工程
有机化学
工程类
作者
Chaoxing Wu,Fushan Li,Tailiang Guo
摘要
Tristable resistive memories based on single layer graphene (SLG)/insulating polymer multi-stacking layer were fabricated. By using the traditional transfer method, the chemical vapor deposition-synthesized SLG serving as charging layers were combined with poly(methyl methacrylate) (PMMA) layers and polystyrene (PS) layers to form charge traps with various depth. Based on the PS/SLG/PMMA/SLG/PMMA multi-stacking layer, the devices exhibited efficient tristable memory performances. The ratios as large as 104 between different resistive states were maintained for a retention time of more than 104 s. The operation mechanisms of stepping-charging in the multi-stacking layer for the tristable resistive switching were proposed on the basis of the current-voltage analysis.
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