Optimizing thermoelectric performance of Cd-doped β-Zn4Sb3 through self-adjusting carrier concentration

材料科学 热电效应 塞贝克系数 功勋 声子散射 热导率 兴奋剂 分析化学(期刊) 热电材料 电阻率和电导率 声子 凝聚态物理 复合材料 热力学 光电子学 物理 化学 色谱法 电气工程 工程类
作者
Shanyu Wang,Fan Fu,Xiaoyu She,Gang Zheng,Li Han,Xinfeng Tang
出处
期刊:Intermetallics [Elsevier BV]
卷期号:19 (12): 1823-1830 被引量:31
标识
DOI:10.1016/j.intermet.2011.07.020
摘要

Crack-free Zn3.96+xCd0.04Sb3 (x = −0.05, 0.0, 0.05 and 0.1) ingots were successfully synthesized by a melting followed by a precisely controlled slow cooling process. The facile control of Zn content realizes the effective self-adjustment of carrier concentration, as well as the optimization of the thermoelectric figure of merit. The Zn-deficiency and stoichiometric samples are single phase, whereas a slight metal Zn phase can be detected in other two Zn-rich samples existing as forms of numerous evenly distributed nano-clusters with size of 20–50 nm and a spot of micro-scale precipitations embedded in the matrix. In particular, these multi-scale microstructures combined with the subtle variation of interstitial Zn apparently intensify phonon scattering and give rise to a “phonon-glass” feature of Zn-rich samples. However, Zn-deficiency sample benefiting from high Seebeck coefficient, shows a high power factor (>1.0 mW m−1 K−1) in the entire temperature range and a maximum value of 1.26 mW m−1 K−1 at 660 K. As a result, the enhanced effective hole mass by a slight Cd-doping coupled with the extremely low lattice thermal conductivity originated from crystalline complexities lead to a high figure of merit of 1.23 at 660 K for Zn3.91Cd0.04Sb3 sample, which is comparable with the highest value reported by T. Caillat et al. [T. Caillat et al. J Phys Chem Solids 1997; 58: 1119−25]. Furthermore, this study demonstrates a simple and easily-industrialized melting combined with slow cooling technique making the high performance β-Zn4Sb3 a promising candidate for low-grade waste heat recovery.
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