材料科学
碲化镉光电
太阳能电池
载流子
光电子学
纳米技术
载流子寿命
硅
作者
Chuanxiao Xiao,Chun‐Sheng Jiang,Marco Nardone,David S. Albin,Adam Danielson,Amit Munshi,Tushar Shimpi,Walajabad Sampath,S.J. Jones,Mowafak Al‐Jassim,Glenn Teeter,N. M. Haegel,H. R. Moutinho
标识
DOI:10.1021/acsami.2c09426
摘要
Solar cells are essentially minority carrier devices, and it is therefore of central importance to understand the pertinent carrier transport processes. Here, we advanced a transport imaging technique to directly visualize the charge motion and collection in the direction of relevant carrier transport and to understand the cell operation and degradation in state-of-the-art cadmium telluride solar cells. We revealed complex carrier transport profiles in the inhomogeneous polycrystalline thin-film solar cell, with the influence of electric junction, interface, recombination, and material composition. The pristine cell showed a unique dual peak in the carrier transport light intensity decay profile, and the dual peak feature disappeared on a degraded cell after light and heat stressing in the lab. The experiments, together with device modeling, suggested that selenium diffusion plays an important role in carrier transport. The work opens a new forum by which to understand the carrier transport and bridge the gap between atomic/nanometer-scale chemical/structural and submicrometer optoelectronic knowledge.
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