材料科学
光致发光
量子点
光电子学
量子产额
电致发光
发光二极管
二极管
量子效率
纳米技术
配体(生物化学)
光学
化学
荧光
物理
图层(电子)
生物化学
受体
作者
Zhishuai Zheng,Zhenwei Ren,Wenlin Xia,Chengzhao Luo,Jie Li,Wenchen Ma,Huifeng Ji,Hengfei Shi,Yu Chen
标识
DOI:10.1002/admi.202202241
摘要
Abstract Multi‐shelled ZnSeTe/ZnSe/ZnS quantum dots (QDs) have served as a promising eco‐friendly emitter for blue quantum dot light‐emitting diodes (QLEDs). While extensive studies have concentrated on the optimization of the shell species and thickness of the multi‐shelled QDs to raise the QLED electroluminescent performance, very few reports focus on the QD surface states involving ligand and defect modulations which are essential for high‐performance QLEDs. Herein, the strategy of bromide decoration is theoretically and practically demonstrated to simultaneously diminish the QD surface defects by passivating the unsaturated Zn for strengthened carrier radiative recombination and removing the superabundant oleic acid through ligand exchange for efficient carrier transport. As a result, the merits of bromide decoration benefit a large increase in photoluminescence quantum yield (PLQY) from 39.7% to 86.2% at the wavelength of 443 nm, as well as a great enhancement of the device performance with over sevenfold improvement in external quantum efficiency (EQE) from 0.74% to 5.46% and a distinct decrease in turn‐on voltage from 6.7 to 5.9 V. Consequently, this work contributes an effective approach of the multi‐shelled QD surface decoration toward enhanced QLED performance.
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