薄膜晶体管
材料科学
电介质
聚合物
晶体管
栅极电介质
光电子学
纳米技术
高分子化学
电气工程
工程类
复合材料
图层(电子)
电压
作者
Lü Li,Shaoxiong Liu,Kaifeng Wang,Bo Wu,Shiming Zhang
标识
DOI:10.1002/macp.202400540
摘要
Abstract Organic thin‐film transistors (OTFTs) are integral to develop future large‐area functional devices. The performance of OTFTs is remarkably related to the gate dielectric material, which affects key parameters, such as on/off ratio, low hysteresis, and device stability. This paper presents a review of novel polymer gate dielectric materials for OTFTs. It begins with an outline of the history of OTFTs, their principles of operation, basic structures, and processing demands associated with the development of cost‐effective organic electronic devices. Two classes of OTFT dielectrics developed in the last decades are reviewed: polymer dielectric materials; polymeric–inorganic hybrid dielectric materials. The recent literature pertaining to gate dielectric materials with excellent dielectric properties, which also provide tunable and reduced OTFT operating voltages are summarized.
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