Single-event Burnout Simulation Study of 1200V Normally off SiC-JFETs

In this paper, the single-event burnout (SEB) of the 1200V normally off trench-injected SiC JFETs is studied by the 2-D numerical simulations. The simulation results reveal that different incidence positions correspond to different burnout mechanisms. The SEB after heavy ion incidence at the center of the source electrode is attributed to impact ionization and the SEB at the gate electrode boundary is attributed to excess carrier generation and accumulation. The corresponding reinforcement designs are proposed for the two burnout mechanisms. Simulation results show that the SEB threshold can be increased significantly when the two reinforcement designs are applied together.