雪崩光电二极管
CMOS芯片
宽带
光电二极管
光电子学
电气工程
计算机科学
电子工程
物理
电信
工程类
探测器
作者
Ruida Liu,Yiwei Peng,Ankur Kumar,Yuan Yuan,Yang-Hang Fan,Yuanming Zhu,Tong Liu,Hyungryul Kang,Inhyun Kim,Peng Yan,Zhihong Huang,Marco Fiorentino,Raymond G. Beausoleil,Samuel Palermo
标识
DOI:10.1109/ipc57732.2023.10360762
摘要
This paper presents a broadband optical PAM4 receiver (RX) integrated with a Si-Ge avalanche photodiode (APD) by wire bonding. Fabricated in 28nm CMOS, the 56Gb/s PAM4 receiver achieves an optical modulation amplitude (OMA) of -7dBm at BER of 10 -4 and power efficiency of 1.61pJ/bit.
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