光电探测器
带宽(计算)
光电子学
雪崩光电二极管
雪崩二极管
材料科学
光学
偏压
波导管
光功率
增益-带宽产品
电压
探测器
击穿电压
物理
电气工程
计算机科学
电信
激光器
CMOS芯片
工程类
放大器
运算放大器
作者
Hengzhen Cao,Yuluan Xiang,Weiyi Sun,Jin Xie,Jingshu Guo,Daoxin Dai
标识
DOI:10.1109/acp/poem59049.2023.10368970
摘要
A lateral Reach-Through type waveguide Ge/Si avalanche photodetector is presented. The device shows a gain of 20.4 and a bandwidth of approximately 45GHz for −18dBm input optical power under −14V reverse bias voltage, with the corresponding gain-bandwidth product of 918GHz. Furthermore, the device has a gain of 32.1 for −21dBm input optical power, which indicating the proposed avalanche photodetector has a record ultra-high gain-bandwidth product of 1440GHz. The 50Gbps eye-diagrams under different optical power are also measured.
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