A novel microchannel-twisted pinfin hybrid heat sink for hotspot mitigation

Thermal hotspots cause excessive localized temperature rise, leading to significant temperature gradients across the microprocessor, which is the primary reason for its inadequate performance and early failure. This study proposes microchannel-pinfin hybrid heat sinks incorporating twisted and non-twisted pinfins of various cross-sectional shapes (hexagonal, pentagonal, square, and triangular) to demonstrate energy-efficient hotspot mitigation in a microprocessor with highly non-uniform power distribution. Microchannels and pinfins are positioned at low- and high-heat-flux zones, respectively, to reduce the temperature variations utilizing their unequal heat transfer capabilities. Here, high- and low-heat-flux zones represent the microprocessor-core area (hotspot) and remaining chip area (background zone), characterized by heat fluxes of 300 W/cm2 and 50 W/cm2, respectively. The pinfin twisting angle varies from 0° to 360° at a step of 45°. Conjugate heat transfer analyses are conducted through numerical solutions of the continuity, Navier-Stokes, and energy equations. The performance of the proposed hybrid heat sinks is compared with the non-hybrid (NH) and hybrid circular pinfins (HCP) heat sinks at Re = 120–440. The hybrid heat sink featuring triangular pinfins twisted at 225° angle (HTP-225) exhibits a remarkable reduction of 48.2 % in the total thermal resistance (Rth) and 58.4 % in the temperature non-uniformity (δT,bs) as compared to the NH heat sinks at Re = 440. Compared to the HCP design, the HTP-225 design shows 26.9 % and 35.8 % lower Rth and δT,bs, respectively. Moreover, the HTP-225 heat sink outperforms the NH heat sink with 46.0 % and 57.0 % lower Rth and δT,bs, respectively, at an equal pumping power of 18.6 mW. Furthermore, the HTP-225 heat sink demonstrates a 96.4 % and 38.5 % higher critical hotspot heat flux dissipating capacity than the NH and HCP heat sinks, respectively, making it a viable and effective solution for alleviating hotspots in high-power-density devices.