中间层
系统集成
三维集成电路
材料科学
通过硅通孔
基质(水族馆)
纵向一体化
集成电路
嵌入式系统
硅
计算机科学
光电子学
纳米技术
操作系统
图层(电子)
地质学
海洋学
蚀刻(微加工)
政治学
法学
标识
DOI:10.1007/978-981-19-9917-8_3
摘要
As mentioned in Chaps. 1 and 2 and Lau in IEEE Trans CPMT 12:1271–1281 (2022), there are at least three different multiple systemMultiple system and heterogeneous integration packaging, as shown in Fig. 3.1, namely, (1) multiple system and heterogeneous integration with thin-film layerThin-film layers directly on top of a build-up package substrate (2.1D IC integration), Fig. 3.1a, (2) multiple system and heterogeneous integration with TSVThrough-silicon via (TSV)-less interposerTSV-less interposer (2.3D IC integration)2.3D IC integration, Fig. 3.1b, and (3) multiple system and heterogeneous integration with TSV interposers (2.5D and 3D IC integration3D IC integration), Fig. 3.1c.
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