Deposition and Characterization of Ammonia-free PECVD Silicon Nitride

Silicon nitride is widely used in microelectronics technology, photoelectric technology and so on. Common silicon nitride preparation methods include Low Pressure Chemical Vapor Deposition (LPCVD), Plasma Enhanced Chemical Vapor Deposition (PECVD), Plasma Enhanced Atomic Layer Deposition (PEALD), etc. Among them, the PECVD method has the characteristics of relatively low process temperature and fast film deposition rate. In this work, we have successfully prepared silicon nitride thin films using Ammonia-free PECVD process technology and studied the influence of Radio Frequency (RF) power and $\mathbf{SiH}_{4}/\mathbf{N}_{2}$ gas ratio on deposition rate of silicon nitride thin film and get a low deposition rate of 2.59 nm/min.