Frequency synaptic behavior of ZnO/HfZrO memristor with pulsed stimuli

The synaptic response of ZnO/HfZrO memristor devices to electrical stimuli was studied. It was found that the frequency of the stimuli affects the rate of current increase, which can be explained by the cluster state of oxygen vacancies at the interface of ZnO/HfZrO. This variation in the synaptic response due to stimulus frequency was consistent with the dynamic adjustment of tolerance thresholds observed in the human brain's response to environmental stimuli. The rate of change in current, representing the sensitivity to stimuli, mirrors the biological nervous system's reaction to environmental changes, such as Ebbinghaus forgetting behavior. Additionally, frequent irregular changes in stimuli lead to a reduced lifespan of the devices, highly resembling the biological lifetime-injure on frequent environmental fluctuations. These findings highlight the memristors' significant similarity to biological nerves in response to stimuli, confirming their tremendous potential in bionic synaptic simulation applications.