Unveiling the Photovoltaic Performance and Thermal Stability of n‐TOPCon, p‐TOPCon, and TOPCoRE Solar Cells Based on 110 μm Wafers

The choice of the best possible TOPCon solar cell architecture in terms of photovoltaic performance, thermal stability, and bifaciality has been one of the most fundamental issues to be addressed. Accordingly, a theoretical approach with the help of Automat FOR Simulation of HETero‐structure simulation software has been adopted to conduct a detailed comparative analysis among n‐TOPCon, p‐TOPCon, and TOPCoRE solar cells based on tentative future wafer thickness, i.e., 110 μm. Initially, the sole impact of the thickness of the ultrathin SiO x layer is unveiled and it is realized that the maximum power conversion efficiency may reach to 24.35%, 23.72%, and 24.45% for n‐TOPCon, p‐TOPCon, and TOPCoRE solar cells; respectively; however, the optimized thickness of SiO x layer is quite low. Subsequently, pinholes within 1.5 nm SiO x tunneling layer are incorporated and it is observed that adequate power output may be realized upon the optimization of the pinhole density. To realize further the cost‐cutting option, the impact of wafer lifetime on the device performance is deduced. Eventually, the operating temperature is varied from 275–375 K with an interval of 25 K to examine the thermal stability of the devices which have demonstrated almost similar thermal degradation within the tested region.