Experimental evaluation of sensitivity of high-speed bus transceiver for space communication

The bus transceiver is a key device for data caching and transmission in communication systems and a key device for space communication. In this paper, the carrier distribution in the silicon material inside the device is analyzed for a typical high-speed bus transceiver linear device, and the effects of 0.1 nJ, 1.0 nJ and 10 nJ on the carrier concentration and focusing point are analyzed by finite element simulation. The single-particle transient (SET) sensitivity of each functional circuit of the device was analyzed by local scanning of the device chip using a pulsed laser beam. The critical laser energy and sensitive position distribution of the single-event transient of the device were obtained. It is found that the device will show transient pulses when the pulsed laser energy is around 1.3 nJ, single-particle latching phenomenon when the pulsed laser energy is around 1.8 nJ, and single-event latching phenomenon when the pulsed laser energy continues to increase to 5 nJ. This study explores an economical and convenient method of bus transceiver SET evaluation using pulsed laser probe, which is an important reference value for high-speed bus applications in space.