Thermal Enhanced Resistive Switching Performance of <100>‐oriented Perovskite [(TZ‐H)2(PbBr4)]n with High Working Temperature: a Triazolium/(PbBr4)n2n– Interfacial Interaction Insight

Abstract Despite the great progress has been made on device parameters and working mechanism of perovskite‐based memristors, thermal instability under extreme conditions limits their performance, and thermal effect on their resistive switching (RS) characteristics remains unclear. Herein, from the viewpoint of organic/inorganic interfacial interaction in a novel 2D <100>‐oriented perovskite [(TZ‐H) 2 (PbBr 4 )] n (TZ = 1H‐1,2,4‐triazole), thermal effect on the RS performance of perovskite‐based memristor is investigated. This FTO/[(TZ‐H) 2 (PbBr 4 )] n /Ag memristor can exhibit high thermal tolerance with a working temperature of 170 °C, and the best RS characteristics can be achieved at 140 °C. Mechanistic studies are executed based on X‐ray single structural analysis, powder X‐ray diffraction, UV–Vis, and fluorescence. Before the occurrence of phase change below 140 °C ( α ‐phase), anisotropic lattice expansion illustrated by the weaker inter‐layer NH···Br hydrogen bond, longer layer–layer distances, more distorted PbBr 6 octrahedra, larger optical gap, and quenched fluorescence can be beneficial for the trap‐filled limited process. After phase transformation into β ‐phase, the breakage of layer–layer interaction and looser layer–layer packing will inhibit the halogen migration, resulting in more space charge limited conduction characters. The unique thermal enhanced RS performance with status monitored by fluorescent chromism can provide a new paradigm for the development of new memristors with highly environmental tolerance.