神经形态工程学
记忆电阻器
电阻随机存取存储器
材料科学
重置(财务)
计算机科学
纳米技术
六方氮化硼
功率(物理)
电子工程
工程物理
电压
电气工程
人工神经网络
工程类
人工智能
物理
经济
量子力学
金融经济学
石墨烯
作者
Huan Duan,Siqi Cheng,Ling Qin,Xuelian Zhang,Bingyang Xie,Yang Zhang,Wenjing Jie
标识
DOI:10.1021/acs.jpclett.2c01962
摘要
The memristor is an excellent candidate for nonvolatile memory and neuromorphic computing. Recently, two-dimensional (2D) materials have been developed for use in memristors with high-performance resistive switching characteristics, such as high on/off ratios, low SET/RESET voltages, good retention and endurance, fast switching speed, and low power and energy consumption. Low-power memristors are highly desired for recent fast-speed and energy-efficient artificial neuromorphic networks. This Perspective focuses on the recent progress of low-power memristors based on 2D materials, providing a condensed overview of relevant developments in memristive performance, physical mechanism, material modification, and device assembly as well as potential applications. The detailed research status of memristors has been reviewed based on different 2D materials from insulating hexagonal boron nitride, semiconducting transition metal dichalcogenides, to some newly developed 2D materials. Furthermore, a brief summary introducing the perspectives and challenges is included, with the aim of providing an insightful guide for this research field.
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