凝聚态物理
正交晶系
拓扑绝缘体
半金属
金属-绝缘体过渡
绝缘体(电)
电子能带结构
自旋轨道相互作用
带隙
拓扑(电路)
材料科学
费米能级
莫特绝缘子
钙钛矿(结构)
物理
金属
晶体结构
化学
结晶学
电子
量子力学
数学
光电子学
组合数学
冶金
作者
Jean-Michel Carter,V. Vijay Shankar,M. Ahsan Zeb,Hae‐Young Kee
出处
期刊:Physical Review B
[American Physical Society]
日期:2012-03-07
卷期号:85 (11)
被引量:256
标识
DOI:10.1103/physrevb.85.115105
摘要
The two-dimensional layered perovskite Sr${}_{2}$IrO${}_{4}$ was proposed to be a spin-orbit Mott insulator, where the effect of Hubbard interaction is amplified on a narrow $J$${}_{\mathrm{eff}}=1/2$ band due to strong spin-orbit coupling. On the other hand, the three-dimensional orthorhombic perovskite (Pbnm) SrIrO${}_{3}$ remains metallic. To understand the physical origin of the metallic state and possible transitions to insulating phases, we construct a tight-binding model for SrIrO${}_{3}$. The band structure possesses a line node made of $J$${}_{\mathrm{eff}}=1/2$ bands below the Fermi level. As a consequence, instability toward magnetic ordering is suppressed, and the system remains metallic. This line node, originating from the underlying crystal structure, turns into a pair of three-dimensional nodal points on the introduction of a staggered potential or spin-orbit coupling strength between alternating layers. Increasing this potential beyond a critical strength induces a transition to a strong topological insulator, followed by another transition to a normal band insulator. We propose that materials constructed with alternating Ir- and Rh-oxide layers along the (001) direction, such as Sr${}_{2}$IrRhO${}_{6}$, are candidates for a strong topological insulator.
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