X-Ray Three-Dimensional Topography Imaging of Basal-Plane and Threading-Edge Dislocations in 4H-SiC

This paper demonstrates the X-ray three-dimensional (3D) topography of basal-plane dislocations (BPDs) and threading edge dislocations (TEDs) in 4H-SiC for the first time. Stereographic topographs are obtained for BPDs and TEDs, showing the propagation of BPDs from a substrate to an epilayer and the conversion of BPDs into TEDs near the epilayer/substrate interface. Strain analysis is also demonstrated for a TED, providing the image of strains in the order of ±10-5. It is verified that the 3D topography is successfully applicable to BPDs and TEDs.