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Characteristics of InAlAs/InGaAs high-electron-mobility transistors under illumination with modulated light

光电子学 材料科学 高电子迁移率晶体管 晶体管 光电导性 电子 二极管 砷化镓 半导体 信号(编程语言) 电压 物理 计算机科学 量子力学 程序设计语言
作者
Yoshifumi Takanashi,Kenichi Takahata,Y. Muramoto
出处
期刊:IEEE Transactions on Electron Devices [Institute of Electrical and Electronics Engineers]
卷期号:46 (12): 2271-2277 被引量:115
标识
DOI:10.1109/16.808049
摘要

The optical response of InAlAs/InGaAs HEMT's under illumination with modulated light from a 1.3-/spl mu/m semiconductor laser diode onto the backside of the substrate is measured by using an optical-signal analyzer. It is clear that the response is composed of two signals. One signal is dominant at a low frequency and is due to the photovoltaic effect that causes excess holes photogenerated in the InGaAs channel to accumulate in the source region. This accumulation thus causes a decrease in the threshold voltage of the HEMTs. To explain this mechanism, a theory is given which connects the change in threshold voltage with that in the Fermi energy of the two-dimensional electron gas (2-DEG). The other signal is dominant at a high-frequency and is due to the photoconductive effect in the InGaAs channel beneath the gate. In this case, a large optical gain is produced since electrons at the source region are replenished in the gate channel. This leads to the first clear observation of a photoconductive signal. The bandwidth due to the photovoltaic effect is as low as 45 MHz and is dominated by the lifetime of the excess holes. The bandwidth due to the photoconductive effect is as high as 37 GHz and is dominated by the gain-bandwidth product of transistors rather than the intrinsic transit-time of electrons.
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