Manipulation of nucleation sites and periods over amorphous substrates

A selective nucleation based crystal growth technique over amorphous substrates is originated. The method manipulates nucleation sites and periods, and hence, controls the grain boundary location by modifying the substrate surface. In Si, Si3 N4 provides artificial nucleation sites, 1–2 μm in diameter, 100 μ m in period, which is surrounded by SiO2 . One Si nucleus is formed exclusively in a small portion of Si3 N4 . The highly faceted and periodically located nuclei grow over SiO2 up to 100 μm in diameter before impingement. A field-effect transistor fabricated inside the island operates comparably to the bulk Si control.